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PDF 2SA1162 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1162 | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SA1162
-0.15A, -50V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low Noise: NF=1 dB(Typ.), 10 dB(Max.)
Complements of the 2SC2712
MECHANICAL DATA
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
CLASSIFICATION OF hFE
Product-Rank 2SA1162-O
Range
70~140
Marking
SO
2SA1162-Y
120~240
SY
2SA1162-GR
200~400
SG
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Device Dissipation
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
-50
-50
-5
-150
150
125, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
NF
Min.
-50
-50
-5
-
-
-
70
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.3
400
-
7
10
Unit
V
V
V
μA
μA
V
MHz
pF
dB
Test Conditions
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-50V, IE=0
VEB= -5V, IC=0
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
VCB=-6V, IC=0.1mA, f=1MHz, Rg=10KΩ
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
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