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Taiwan Semiconductor - (HER801G - HER808G) Glass Passivated High Efficient Rectifiers

Numéro de référence HER803G
Description (HER801G - HER808G) Glass Passivated High Efficient Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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HER803G fiche technique
HER801G - HER808G
8.0 AMPS. Glass Passivated High Efficient Rectifiers
R-6
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 1.65 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HER HER HER HER HER HER HER HER
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TA = 55 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VRRM
VRMS
VDC
I(AV)
IFSM
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
8.0
150
Maximum Instantaneous Forward Voltage
@ 8.0A
VF
1.0 1.3 1.7
Maximum DC Reverse Current
@TA=25 oC at Rated DC Blocking Voltage
@ TA=125 oC
Maximum Reverse Recovery Time ( Note 1 )
IR
Trr
10
400
50
80
Typical Junction Capacitance ( Note 2 )
Cj
100
65
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Units
V
V
V
A
A
V
uA
uA
nS
pF
oC
oC
Version: A06
Free Datasheet http://www.datasheet4u.com/

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