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PDF 2N5058 Data sheet ( Hoja de datos )
| Número de pieza | 2N5058 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor Corp | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5058 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2N5058
2N5059
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5058 and 2N5059
are silicon NPN epitaxial planar transistors designed for
high voltage general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
JA
JC
2N5058
300
2N5059
250
300 250
7.0 6.0
150
1.0
5.0
-65 to +200
150
30
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5058
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=100V
- 50
ICBO
VCB=100V, TA=125°C
- 20
IEBO
VEB=5.0V
- 10
BVCBO
IC=100μA
300 -
BVCEO
IC=30mA
300 -
BVEBO
IE=100μA
7.0 -
VCE(SAT) IC=30mA, IB=3.0mA
- 1.0
VBE(SAT) IC=30mA, IB=3.0mA
- 0.85
VBE(ON)
VCE=25V, IC=30mA
- 0.82
hFE VCE=25V, IC=5.0mA
10 -
hFE VCE=25V, IC=30mA
35 150
hFE
VCE=25V, IC=30mA, TA=-55°C
10 -
hFE VCE=25V, IC=100mA
35 -
fT
VCE=25V, IC=10mA, f=20MHz
30 160
Cob VCB=10V, IE=0, f=1.0MHz
- 10
Cib VEB=0.5V, IC=0, f=1.0MHz
- 75
2N5059
MIN MAX
- 50
- 20
- 10
250 -
250 -
6.0 -
- 1.0
- 0.85
- 0.82
- 10
30 150
--
30 -
30 160
- 10
- 75
UNITS
V
V
V
mA
W
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
R1 (27-March 2015)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5058.PDF ] | |
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