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PDF 2N4921 Data sheet ( Hoja de datos )
| Número de pieza | 2N4921 | |
| Descripción | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductor)
Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
• Low Saturation Voltage —
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
• Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
• Excellent Safe Operating Area
• Gain Specified to IC = 1.0 Amp
• Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating & Storage Junction
Temperature Range
Symbol 2N4921 2N4922 2N4923
VCEO
40
60
80
VCB
40
60
80
VEB
5.0
IC 1.0
3.0
IB 1.0
PD 30
0.24
TJ, Tstg
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Max Unit
4.16 _C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
2N4921
thru
2N4923 *
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
321
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–09
TO–225AA TYPE
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N4921/D
1 page  
2N4921 thru 2N4923
1000
700
500
300
200 TJ = 150°C
VCE = 1.0 V
100 25°C
70
50 -ā55°C
30
20
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
1.0
0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A
0.6 TJ = 25°C
0.4
0.2
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
200
108
107
IC = 2 x ICES
106
IC ≈ ICES
105
IC = 10 x ICES
VCE = 30 V
ICES VALUES
104 OBTAINED FROM
FIGURE 12
103
0
30
60 90 120 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base–Emitter Resistance
1.5
TJ = 25°C
1.2
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
104
103 TJ = 150°C
102 100°C
25°C
101
100
IC = ICES
VCE = 30 V
10-1
REVERSE
10-ā2
-ā0.2 -ā0.1 0
FORWARD
+ā0.1 +ā0.2 +ā0.3 +ā0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
+ā0.5
+ā2.5
+ā2.0
+ā1.5
*APPLIES FOR IC/IB ≤
hFEĂ@ĂVCEĂ +Ă 1.0ĂV
2
+ā1.0 TJ = 100°C to 150°C
+ā0.5 *θVC FOR VCE(sat)
0 -ā55°C to +100°C
-ā0.5
-ā1.0
-ā1.5
-ā2.0 θVB FOR VBE
-ā2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N4921.PDF ] | |
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