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PDF 2N4918 Data sheet ( Hoja de datos )
| Número de pieza | 2N4918 | |
| Descripción | GENERAL.PURPOSE POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductor)
Medium-Power Plastic PNP
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
• Low Saturation Voltage —
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
• Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
• Excellent Safe Operating Area
• Gain Specified to IC = 1.0 Amp
• Complement to NPN 2N4921, 2N4922, 2N4923
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRatings
Symbol 2N4918 2N4919 2N4920 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
VCEO
40
60
80 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
VCB
40
60
80 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
VEB
5.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous (1)
IC*
1.0 Adc
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25°C
Derate above 25_C
IB
PD
1.0 Adc
30 Watts
0.24 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating & Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
θJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data for 2N4918 Series.
Max Unit
4.16 _C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
2N4918
thru
2N4920*
*ON Semiconductor Preferred Device
3 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–09
TO–225AA TYPE
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N4918/D
1 page  
2N4918 thru 2N4920
TYPICAL DC CHARACTERISTICS
1000
700
500
300 TJ = 150°C
200
25°C
100
70 -ā55°C
50
30
20
VCE = 1.0 V
1.0
IC = 0.1 A
0.8
0.25 A
0.5 A
0.6
TJ = 25°C
0.4
0.2
1.0 A
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
200
108
IC = 10 ICES
VCE = 30 V
107
106 IC ≈ ICES
105 IC = 2x ICES
ICES VALUES
104 OBTAINED FROM
FIGURE 13
103
0 30 60 90 120 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base–Emitter Resistance
1.5
1.2 TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
102
101
TJ = 150°C
100
10-1
100°C
10-ā2
104
103 REVERSE
-ā0.2 -ā0.1
IC = ICES
25°C
FORWARD
0 +ā0.1 +ā0.2
VCE = 30 V
+ā0.3 +ā0.4 +ā0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
+ā2.5
+ā2.0
+ā1.5
*APPLIES FOR IC/IB <
hFEĂ@ĂVCEĂ +Ă 1.0ĂV
2
+ā1.0 TJ = 100°C to 150°C
+ā0.5
0
*θVC FOR VCE(sat)
TJ = -ā55°C to +100°C
-ā0.5
-ā1.0
-ā1.5
-ā2.0 θVB FOR VBE
-ā2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N4918.PDF ] | |
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