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PDF 2N4915 Data sheet ( Hoja de datos )
| Número de pieza | 2N4915 | |
| Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor Corp | |
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2N4904 2N4905 2N4906 PNP
2N4913 2N4914 2N4915 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4904, 2N4913
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
2N4904
2N4913
40
2N4905
2N4914
60
2N4906
2N4915
80
40 60 80
5.0
5.0
1.0
87.5
-65 to +200
2.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
PNP
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=Rated VCBO
- 0.1
ICEO
VCE=Rated VCEO
- 1.0
ICEV
VCE=Rated VCEO, VBE=1.5V
- 0.1
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
- 2.0
IEBO
VEB=5.0V
- 1.0
BVCEO
IC=200mA (2N4904, 2N4913)
40 -
BVCEO
IC=200mA (2N4905, 2N4914)
60 -
BVCEO
IC=200mA (2N4906, 2N4915)
80 -
VCE(SAT) IC=2.5A, IB=250mA
- 1.0
VCE(SAT) IC=5.0A, IB=1.0A
- 1.5
VBE(ON)
VCE=2.0V, IC=2.5A
- 1.4
hFE VCE=2.0V, IC=2.5A
25 100
hFE VCE=2.0V, IC=5.0A
7.0 -
hfe VCE=10V, IC=500mA, f=1.0kHz
40 -
fT VCE=10V, IC=1.0A, f=1.0MHz
4.0 -
NPN
MIN MAX
- 1.0
- 1.0
- 1.0
- 2.0
- 1.0
40 -
60 -
80 -
- 1.0
- 1.5
- 1.4
25 100
7.0 -
20 -
4.0 -
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
R1 (7-March 2013)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4915.PDF ] | |
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