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Número de pieza | FDMF6821C | |
Descripción | High-Frequency DrMOS Module | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMF6821C (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
No Preview Available ! October 2012
FDMF6821C — Extra-Small, High-Performance,
High-Frequency DrMOS Module
Benefits
Ultra-Compact 6x6 mm PQFN, 72% Space-Saving
Compared to Conventional Discrete Solutions
Fully Optimized System Efficiency
Clean Switching Waveforms with Minimal Ringing
High-Current Handling
Features
Over 93% Peak-Efficiency
High-Current Handling: 50 A
High-Performance PQFN Copper-Clip Package
3-State 3.3 V PWM Input Driver
Skip-Mode SMOD# (Low-Side Gate Turn Off) Input
Thermal Warning Flag for Over-Temperature
Condition
Driver Output Disable Function (DISB# Pin)
Internal Pull-Up and Pull-Down for SMOD# and
DISB# Inputs, Respectively
Fairchild PowerTrench® Technology MOSFETs for
Clean Voltage Waveforms and Reduced Ringing
Fairchild SyncFET™ (Integrated Schottky Diode)
Technology in Low-Side MOSFET
Integrated Bootstrap Schottky Diode
Adaptive Gate Drive Timing for Shoot-Through
Protection
Under-Voltage Lockout (UVLO)
Optimized for Switching Frequencies up to 1 MHz
Low-Profile SMD Package
Fairchild Green Packaging and RoHS Compliance
Based on the Intel® 4.0 DrMOS Standard
Description
The XS™ DrMOS family is Fairchild’s next-generation,
fully optimized, ultra-compact, integrated MOSFET plus
driver power stage solution for high-current, high-
frequency, synchronous buck DC-DC applications. The
FDMF6821C integrates a driver IC, two power
MOSFETs, and a bootstrap Schottky diode into a
thermally enhanced, ultra-compact 6x6 mm package.
With an integrated approach, the complete switching
power stage is optimized with regard to driver and
MOSFET dynamic performance, system inductance,
and power MOSFET RDS(ON). XS™ DrMOS uses
Fairchild's high-performance PowerTrench® MOSFET
technology, which dramatically reduces switch ringing,
eliminating the need for snubber circuit in most buck
converter applications.
A driver IC with reduced dead times and propagation
delays further enhances the performance. A thermal
warning function warns of a potential over-temperature
situation. The FDMF6821C also incorporates a Skip
Mode (SMOD#) for improved light-load efficiency. The
FDMF6821C also provides a 3-state 3.3 V PWM input
for compatibility with a wide range of PWM controllers.
Applications
High-Performance Gaming Motherboards
Compact Blade Servers, V-Core and Non-V-Core
DC-DC Converters
Desktop Computers, V-Core and Non-V-Core
DC-DC Converters
Workstations
High-Current DC-DC Point-of-Load Converters
Networking and Telecom Microprocessor Voltage
Regulators
Small Form-Factor Voltage Regulator Modules
Ordering Information
Part Number Current Rating
Package
Top Mark
FDMF6821C
50 A
40-Lead, Clipbond PQFN DrMOS, 6.0 mm x 6.0 mm Package FDMF6821C
© 2012 Fairchild Semiconductor Corporation
FDMF6821C • Rev. 1.0.0
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Electrical Characteristics
Typical values are VIN = 12 V, VCIN = 5 V, VDRV = 5 V, and TA = TJ = +25°C unless otherwise noted.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Basic Operation
IQ Quiescent Current
VUVLO UVLO Threshold
VUVLO_Hys UVLO Hysteresis
IQ=IVCIN+IVDRV, PWM=LOW or HIGH or Float
2 mA
VCIN Rising
2.9 3.1 3.3 V
0.4 V
PWM Input (VCIN = VDRV = 5 V ±10%)
RUP_PWM Pull-Up Impedance
RDN_PWM Pull-Down Impedance
VIH_PWM PWM High Level Voltage
VTRI_HI 3-State Upper Threshold
VTRI_LO 3-State Lower Threshold
VIL_PWM PWM Low Level Voltage
tD_HOLD-OFF 3-State Shut-Off Time
VHiZ_PWM 3-State Open Voltage
PWM Input (VCIN = VDRV = 5 V ±5%)
RUP_PWM Pull-Up Impedance
RDN_PWM Pull-Down Impedance
VIH_PWM PWM High Level Voltage
VTRI_HI 3-State Upper Threshold
VTRI_LO 3-State Lower Threshold
VIL_PWM PWM Low Level Voltage
tD_HOLD-OFF 3-State Shut-Off Time
VHiZ_PWM 3-State Open Voltage
DISB# Input
VIH_DISB High-Level Input Voltage
VIL_DISB
IPLD
Low-Level Input Voltage
Pull-Down Current
tPD_DISBL Propagation Delay
tPD_DISBH Propagation Delay
VPWM=5 V
VPWM=0 V
VPWM=5 V
VPWM=0 V
PWM=GND, Delay Between DISB# from
HIGH to LOW to GL from HIGH to LOW
PWM=GND, Delay Between DISB# from
LOW to HIGH to GL from LOW to HIGH
26
12
1.88 2.25 2.61
1.84 2.20 2.56
0.70 0.95 1.19
0.62 0.85 1.13
160 200
1.40 1.60 1.90
kΩ
kΩ
V
V
V
V
ns
V
26
12
2.00 2.25 2.50
1.94 2.20 2.46
0.75 0.95 1.15
0.66 0.85 1.09
160 200
1.45 1.60 1.80
kΩ
kΩ
V
V
V
V
ns
V
2V
0.8 V
10 µA
25 ns
25 ns
SMOD# Input
VIH_SMOD High-Level Input Voltage
2V
VIL_SMOD Low-Level Input Voltage
IPLU Pull-Up Current
0.8 V
10 µA
tPD_SLGLL Propagation Delay
PWM=GND, Delay Between SMOD# from
HIGH to LOW to GL from HIGH to LOW
10
ns
tPD_SHGLH Propagation Delay
PWM=GND, Delay Between SMOD# from
LOW to HIGH to GL from LOW to HIGH
10
ns
Continued on the following page…
© 2012 Fairchild Semiconductor Corporation
FDMF6821C • Rev. 1.0.0
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page Typical Performance Characteristics
Test Conditions: VCIN=5 V, VDRV=5 V, TA=25°C, and natural convection cooling, unless otherwise specified.
12.0
11.5
VCIN = 5V
11.0
10.5
10.0
9.5
9.0
-55
0 25 55 100 125
Driver IC Junction Temperature, TJ (oC)
150
500
IF = 20mA
450
400
350
300
250
200
150
100
-55 0 25 55 100 125
Driver IC Junction Temperature, TJ (oC)
150
Figure 24. DISB# Pull-Down Current vs.
Temperature
Figure 25. Boot Diode Forward Voltage vs.
Temperature
© 2012 Fairchild Semiconductor Corporation
FDMF6821C • Rev. 1.0.0
11
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet FDMF6821C.PDF ] |
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