DataSheetWiki


TC58NVG4D2ETA00 fiches techniques PDF

Toshiba - 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM

Numéro de référence TC58NVG4D2ETA00
Description 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





TC58NVG4D2ETA00 fiche technique
TOSHIBA CONFIDENTIAL TC58NVG4D2ETA00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell)
DESCRIPTION
The TC58NVG4D2 is a single 3.3 V 16 Gbit (17,968,398,336 bits) NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 2084 blocks.
The device has two 8568-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 8568-byte increments. The Erase operation is implemented in a single block
unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).
The TC58NVG4D2 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
TC58NVG4D2E
8568 × 260.5K × 8
8568 × 8
8568 bytes
(1M + 47 K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 1968 blocks
Max 2084 blocks
Power supply
VCC = 2.7 V to 3.6 V
VCCQ = 2.7 V to 3.6 V
Access time
Cell array to register 200 µs max
Serial Read Cycle
25 ns min
Program/Erase time
Auto Page Program
Auto Block Erase
1600 µs/page typ.
3 ms/block typ.
Operating current
Read (30 ns cycle)
Program (avg.)
Erase (avg.)
Standby
50 mA max.
50 mA max.
50 mA max.
100 µA max
Package
TSOP I 48-P-1220-0.50C (Weight: 0.53 g typ.)
FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND COMMENTS (17).
24 bit ECC for each 1024 bytes is required.
1 2008-08-18C
Free Datasheet http://www.datasheet4u.com/

PagesPages 65
Télécharger [ TC58NVG4D2ETA00 ]


Fiche technique recommandé

No Description détaillée Fabricant
TC58NVG4D2ETA00 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche