|
|
Numéro de référence | TC58NVG4D2ETA00 | ||
Description | 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM | ||
Fabricant | Toshiba | ||
Logo | |||
TOSHIBA CONFIDENTIAL TC58NVG4D2ETA00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell)
DESCRIPTION
The TC58NVG4D2 is a single 3.3 V 16 Gbit (17,968,398,336 bits) NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 2084 blocks.
The device has two 8568-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 8568-byte increments. The Erase operation is implemented in a single block
unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).
The TC58NVG4D2 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
Memory cell array
Register
Page size
Block size
TC58NVG4D2E
8568 × 260.5K × 8
8568 × 8
8568 bytes
(1M + 47 K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Mullti Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 1968 blocks
Max 2084 blocks
• Power supply
VCC = 2.7 V to 3.6 V
VCCQ = 2.7 V to 3.6 V
• Access time
Cell array to register 200 µs max
Serial Read Cycle
25 ns min
• Program/Erase time
Auto Page Program
Auto Block Erase
1600 µs/page typ.
3 ms/block typ.
• Operating current
Read (30 ns cycle)
Program (avg.)
Erase (avg.)
Standby
50 mA max.
50 mA max.
50 mA max.
100 µA max
• Package
TSOP I 48-P-1220-0.50C (Weight: 0.53 g typ.)
• FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND COMMENTS (17).
24 bit ECC for each 1024 bytes is required.
1 2008-08-18C
Free Datasheet http://www.datasheet4u.com/
|
|||
Pages | Pages 65 | ||
Télécharger | [ TC58NVG4D2ETA00 ] |
No | Description détaillée | Fabricant |
TC58NVG4D2ETA00 | 16 GBIT (2G X 8 BIT) CMOS NAND E2PROM | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |