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Numéro de référence | TC58NVG6DDJTA00 | ||
Description | 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM | ||
Fabricant | Toshiba | ||
Logo | |||
TOSHIBA CONFIDENTIAL TC58NVG6DDJTA00
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64 GBIT (8G × 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell)
DESCRIPTION
The TC58NVG6DD is a single 3.3 V 64 Gbit (77,054,607,360 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (16384 + 1280) bytes × 256 pages × 2130 blocks.
The device has two 17664-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 17664-byte increments. The Erase operation is implemented in a single block
unit (4 Mbytes + 320 Kbytes: 17664 bytes × 256 pages).
The TC58NVG6DD is a serial-type memory device which utilizes the DQ pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
Device capacity
Register
Page size
Block size
TC58NVG6DDJTA00
17664 × 256 × 2130 × 8 bits
17664 × 8 bits
17664 bytes
(4M + 320 K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 2018 blocks
Max 2130 blocks
• Power supply
VCC = 2.7 V to 3.6 V
• Access time
Cell array to register 50 μs typ. (TBD)
100 μs max (TBD)
Serial Read Cycle
20 ns min
• Program/Erase time
Auto Page Program
Auto Block Erase
1400 μs/page typ.(TBD)
5 ms/block typ.(TBD)
• Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
TBD mA max (per 1 chip)
TBD mA max (per 1 chip)
TBD mA max (per 1 chip)
TBD μA max (per 1 chip)
• Package
(Weight: TBD g typ.)
• FOR RELIABILITY GUIDANCE, PLEASE REFER TO THE APPLICATION NOTES AND COMMENTS (17).
1 2011-07-27C
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 69 | ||
Télécharger | [ TC58NVG6DDJTA00 ] |
No | Description détaillée | Fabricant |
TC58NVG6DDJTA00 | 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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