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PDF NSS40300MDR2G Data sheet ( Hoja de datos )
| Número de pieza | NSS40300MDR2G | |
| Descripción | PNP Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSS40300MDR2G
Dual Matched 40 V, 6.0 A,
Low VCE(sat) PNP Transistor
These transistors are part of the ON Semiconductor e2PowerEdge
family of Low VCE(sat) transistors. They are assembled to create a pair
of devices highly matched in all parameters, including ultra low
saturation voltage VCE(sat), high current gain and Base/Emitter turn on
voltage.
Typical applications are current mirrors, differential amplifiers,
DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e2PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
• Current Gain Matching to 10%
• Base Emitter Voltage Matched to 2 mV
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−40 Vdc
−40 Vdc
−7.0 Vdc
−3.0 A
−6.0 A
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLTS
6.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
7,8
COLLECTOR
5,6
1
BASE
3
BASE
2
EMITTER
4
EMITTER
8
1
SOIC−8
CASE 751
STYLE 29
DEVICE MARKING
8
P40300
AYWWG
G
1
P40300 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 1
ORDERING INFORMATION
Device
Package Shipping†
NSS40300MDR2G
SOIC−8
2500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS40300MD/D
Free Datasheet http://www.datasheet4u.com/
1 page  
350
300
250
200
150
100
0
NSS40300MDR2G
TYPICAL CHARACTERISTICS
Cibo (pF)
123 45
VEB, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
10
1.0
100
90
80
70
60
50
Cobo (pF)
40
30
6 0 5 10 15 20 25 30 35 40
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
1 ms
1 s 10 ms
100 ms
0.1
Thermal Limit
0.01
0.001 Single Pulse Test at TA = 25°C
0.01 0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
100
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NSS40300MDR2G.PDF ] | |
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