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PDF NVMFS4841N Data sheet ( Hoja de datos )
| Número de pieza | NVMFS4841N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVMFS4841N
Power MOSFET
30V, 7 mW, 89A, Single N−Channel SO8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified
• These are Pb−Free Devices*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
r3e,n4t)RqJA (Notes 1 &
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current limited by package
(Note 4)
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxPkg
30
"20
89
63
112
56
16
11
3.7
1.8
336
80
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS 51 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 19 A, L = 1.0 mH, RG = 25 W)
EAS 180 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2, 3)
RYJ−mb
1.3 °C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.0 mW @ 10 V
11.4 mW @ 4.5 V
ID MAX
89 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
V4841
AYWWG
D
GGD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NVMFS4841NT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NVMFS4841NT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and
soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 0
1
Publication Order Number:
NVMFS4841N/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NVMFS4841N
TYPICAL PERFORMANCE CURVES
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t, PULSE TIME (s)
Figure 13. FET Thermal Response
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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