NVMFD5853NL Datasheet PDF - ON Semiconductor
| Part Number | NVMFD5853NL | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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NVMFD5853NL,
NVMFD5853NLWF
Power MOSFET
40 V, 10 mW, 34 A, Dual N−Channel Logic
Level, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVMFD5853NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
& 4)
RqJA
(Notes
1,
3
Power Dissipation
RqJA (Notes 1 & 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
34
24
24
12
12
8.5
3.0
1.5
165
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28.3 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
EAS
TL
34 A
40 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
RYJ−mb
6.2
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (min foot-
print)
RqJA
51 °C/W
162
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 3
1
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
10 mW @ 10 V
15 mW @ 4.5 V
ID MAX
34 A
Dual N−Channel
D1
D2
G1 G2
S1 S2
1
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
D1 D1
S1
G1 5853xx
S2 AYWZZ
G2
D2 D2
D1
D1
D2
D2
5853NL = Specific Device Code
for NVMFD5853NL
5853LW = Specific Device Code
for NVMFD5853NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping†
NVMFD5853NLT1G
DFN8 1500 / Tape &
(Pb−Free)
Reel
NVMFD5853NLWFT1G DFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NVMFD5853NL/D
Free Datasheet http://www.datasheet4u.com/
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NVMFD5853NL, NVMFD5853NLWF
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
20%
10%
5%
1 2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
1
10
100 1000
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NVMFD5853NL electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NVMFD5853NL.PDF Datasheet ] | |
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