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Datasheet K2902-01MR-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
K29 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K2900-01 | N-channel MOS-FET > Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings  Fuji Electric mosfet | | |
| 2 | K2902-01MR | N-Channel MOSFET, 2SK2902-01MR 2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings Fuji Electric data | | |
| 3 | K2915 | N-Channel MOSFET, 2SK2915 2SK2915
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit  Toshiba Semiconductor data | | |
| 4 | K2917 | N-Channel MOSFET, 2SK2917 2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs Toshiba Semiconductor data | | |
| 5 | K2926 | N-Channel MOSFET, 2SK2926 2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.042Ω typ.
• 4V gate drive devices. • High speed switching
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
ADE-208-535 1st. Edition
2SK2926(L), 2S  Hitachi Semiconductor data | | |
| 6 | K2929 | N-Channel MOSFET, 2SK2929 2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Sour Hitachi Semiconductor data | | |
| 7 | K2930 | N-Channel MOSFET, 2SK2930 2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Sour Hitachi Semiconductor data | |
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