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Numéro de référence | 2N4401 | ||
Description | 40V, 600mA, NPN Planar Transistor, TO-92 | ||
Fabricant | Diotec Semiconductor | ||
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1 Page
2N4400, 2N4401
NPN
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCE0
VEB0
Ptot
IC
Tj
TS
Grenzwerte (TA = 25°C)
2N4400, 2N4401
40 V
60 V
6V
625 mW 1)
600 mA
150°C
- 55…+ 150°C
Characteristics (Tj = 25°C)
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
VCEsat
Base saturation voltage – Basis-Sättigungsspannung
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
VBEsat
Collector cutoff current – Kollektorreststrom
VCE = 35 V, VEB = 0.4 V
ICBV
Emitter cut-off current – Emitterreststrom
VCE = 35 V, VEB = 0.4 V
IEBV
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 400 mV
– – 750 mV
750 mV – 950 mV
– – 1.2 V
– – 100 nA
– – 100 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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Pages | Pages 2 | ||
Télécharger | [ 2N4401 ] |
No | Description détaillée | Fabricant |
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