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Galaxy Semi-Conductor - PLASTIC SILICON RECTIFIER

Numéro de référence 4A10
Description PLASTIC SILICON RECTIFIER
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





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4A10 fiche technique
BL GALAXY ELECTRICAL
PLASTIC SILICON RECTIFIER
4A1---4A10
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
4A1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length, @TA=75
Peak forward surge current
VRRM
VRMS
VDC
IF(AV)
10ms single half-sine-wave
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage
@ 4.0A
IFSM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note1)
CJ
Typical thermal resistance
(Note2)
R JA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
100
70
100
4A2
200
140
200
4A4 4A6
400 600
280 420
400 600
4.0
4A8 4A10
800 1000
560 700
800 1000
UNITS
V
V
V
A
250.0
A
0.95
10.0
100.0
50
20
- 55 ---- +150
- 55 ---- +150
V
A
pF
/W
www.galaxycn.com
Document Number 0260010
BLGALAXY ELECTRICAL
1.
Free Datasheet http://www.datasheet4u.com/

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