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PDF 2N4401 Data sheet ( Hoja de datos )

Número de pieza 2N4401
Descripción NPN General Purpose Amplifier
Fabricantes Micro Commercial Components 
Logotipo Micro Commercial Components Logotipo

2N4401 NPN Transistor


1. - NPN Transistor - Philips






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No Preview Available ! 2N4401 Hoja de datos, Descripción, Manual

MCC
  omponents
21201 Itasca Street Chatsworth

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2N4401
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=0.1mAdc, IC=0)
Base Cutoff Current
(VCE=35Vdc, VBE=0.4Vdc)
Collector Cutoff Current
(VCE=35Vdc, VBE=0.4Vdc)
40 Vdc
60 Vdc
6.0 Vdc
0.1 µAdc
0.1 µAdc
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
20
40
80
100
40
0.75
300
0.4
0.75
0.95
1.2
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=20mAdc, VCE=10Vdc, f=100MHz)
Ccb Collector-Base Capacitance
(VCB=5.0Vdc, IE=0, f=100kHz)
Ceb Emitter-Base Capacitance
(VBE=0.5Vdc, IC=0, f=100kHz)
SWITCHING CHARACTERISTICS
250 MHz
6.5 pF
30.0 pF
td
Delay Time
(VCC=30Vdc, VBE=0.2Vdc
tr
Rise Time
IC=150mAdc, IB1=15mAdc)
ts Storage Time (VCC=30Vdc, IC=150mAdc
tf
Fall Time
IB1=IB2=15mAdc)
*Pulse Width 300µs, Duty Cycle 2.0%
15 ns
20 ns
225 ns
30 ns
NPN General
Purpose Amplifier
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
---
D .016 .020
E .135 .145
G .095 .105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
www.mccsemi.com

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