|
|
PDF 2SC5706D Data sheet ( Hoja de datos )
| Número de pieza | 2SC5706D | |
| Descripción | NPN Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC5706D (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Elektronische Bauelemente
2SC5706 D
NPN Silicon
General Purpose Transistor
FEATURES
Large current capacitance
RoHS Compliant Product
6. 50Ć0. 15
5. 30Ć0. 10
C
TO-252
0. 51Ć0. 05
2. 30Ć0. 10
Low collector-to-emitter saturation voltage
High-speed switching
0. 51Ć0. 10 1. 20
5
High allowable power dissipation
0Ć0. 10
5
5
MARKING : 5706
(With Date Code)
MAXIMUM RATINGS* TA=25ćunless otherwise noted
0. 80Ć0. 10
2. 30Ć0. 10
B
C
0. 60Ć0. 10
2. 30Ć0. 10
E
0 Ć9
0. 51
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCES
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
Collector Current
VEBO
ICBO
6
5
V
A
Collector Current (Pulse)
ICP 7.5
A
Base Current
IB 1.2
A
Junction Temperature
Tj +150
°C
Storage Temperature
Total Power Dissipation
TSTG
PD
PD(TC=25°C)
-55~+150
0.8
15
°C
W
W
ELECTRICAL CHARACTERISTICS (Tamb=25OCunless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Symbol
BVCBO
Min Typ.
80 -
Max Unit. Test Conditions
- V IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCES 80 -
- V IC=100µA, RBE=0
Collector-Emitter Breakdown Voltage
BVCEO 50 -
- V IC=1mA, RBE=
Emitter-Base Breakdown Voltage
BVEBO 6 -
- V IE=10µA, IC=0
Collector-Base Cutoff Current
ICBO
--
1 µA VCB=40V, IE=0
Emitter-Base Cutoff Current
IEBO
--
1 µA VEB=4V, IC=0
Collector Saturation Voltage 1
*VCE(sat)1
-
-
135 mV IC=1A, IB=50mA
Collector Saturation Voltage 2
*VCE(sat)2
-
-
240 mV IC=2A, IB=100mA
Base Saturation Voltage
*V BE(sat)
-
-
1.2 V IC=2A, IB=100mA
DC Current Gain
*hFE
200 -
560
VCE=2V, IC=500mA
Gain-Bandwidth Product
fT
- 400
- MHz VCE=10V, IC=500mA
Output Capacitance
Cob
- 15
- pF VCB=10V, f=1MHz
Turn-On Time
ton
- 35
- ns See specified test circuit.
Storage Time
tstg - 300 - ns See specified test circuit.
Fall Time
tf
- 20
- ns See specified test circuit.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5706D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC5706 | POWER TRANSISTOR(5A/50V/15W) |  Mospec Semiconductor |
| 2SC5706 | High Current Switching Applications |  Sanyo Semicon Device |
| 2SC5706 | Silicon NPN Power Transistor |  Inchange Semiconductor |
| 2SC5706 | NPN EPITAXIAL PLANAR TRANSISTOR |  Weitron Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |