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K3603-01MR fiches techniques PDF

Fuji Electric - MOSFET ( Transistor ) - 2SK3603-01MR

Numéro de référence K3603-01MR
Description MOSFET ( Transistor ) - 2SK3603-01MR
Fabricant Fuji Electric 
Logo Fuji Electric 





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K3603-01MR fiche technique
2SK3603-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Symbol
VDS
VDSX *5
ID
ID(puls]
VGS
IAS *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
Tch
Tstg
VISO *6
Ratings
150
120
±23
±92
±30
23
130.8
20
5
2.16
37
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
*1 L=363µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 150V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=8A VGS=10V
ID=8A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=8A
VGS=10V
RGS=10
VCC=75V
ID=16A
VGS=10V
L=363µH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
150
3.0
6
23
Typ.
10
79
12
760
130
6
12
2.8
22
6.2
21
9
6
1.10
0.13
0.59
Max. Units
V
5.0 V
25 µA
250
100 nA
105 m
S
1140
pF
195
9
18 ns
4.2
33
9.3
31.5 nC
13.5
9
A
1.65 V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
3.378 °C/W
58.0 °C/W
1
Free Datasheet http://www.datasheet4u.com/

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