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Número de pieza | UPD5904T7K | |
Descripción | CMOS Integrated Circuits High Power SP4T Switch | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPD5904T7K (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! Preliminary Data Sheet
μPD5904T7K
CMOS Integrated Circuits High Power SP4T Switch
R09DS0045EJ0200
Rev.2.00
Dec 11, 2012
DESCRIPTION
The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna
switching and other High Power RF switching applications up to +35 dBm.
This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.
This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.
FEATURES
• Low control voltage
• Low insertion loss
: Vcont = 1.3 V MIN.,VDD = 2.3 V MIN.
: Lins = 0.4 dB TYP. @ f = 1 GHz
• High isolation
: Lins = 0.5 dB TYP. @ f = 2 GHz
: ISL = 35 dB TYP. @ f = 1 GHz
: ISL = 30 dB TYP. @ f = 2 GHz
• High Handling power
: Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz
• High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm)
• No DC blocking capacitors required.
APPLICATIONS
• GSM and UMTS/LTE main Antenna switching
• Diversity Antenna switching
• Antenna tuning Application
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
μPD5904T7K-E2 μPD5904T7K-E2-A 12-pin plastic
5904 • Embossed tape 8 mm wide
QFN
(T7K) (Pb-Free)
• Pin 10, 11 and 12 face the perforation side
of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5904T7K-A
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 1 of 14
Free Datasheet http://www.datasheet4u.com/
1 page μPD5904T7K
<R> EVALUATION CIRCUIT
RFC
GND
GND
12 11 10
RF4
1
RF1
9
RF3
2
13
GND
8
RF2
37
GND
456
GND
VDD
Vcont1
Vcont2
1 000 pF 1 000 pF 1 000 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
APPLICATION INFORMATION
LESD
Switch
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
antenna.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 5 of 14
Free Datasheet http://www.datasheet4u.com/
5 Page μPD5904T7K
RF 1/RF2/RF3/RF4 RETURN LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 3.8 GHz
0
−5
−10
−15
− 20 2.5 V
3.3 V
−25
−30
VDD = 2.3 V
−35
−40
−60 −40 −20 0 20 40 60 80 100
Operating Ambient Temperature TA (°C)
RRF1/RF2/RF3/RF4 RETURN LOSS vs.
OPERATING AMBIENT TEMPERATURE f = 6 GHz
0
−5
−10
−15 3.3 V
− 20
−25 2.5 V
−30 VDD = 2.3 V
−35
−40
−60 −40 −20 0 20 40 60 80 100
Operating Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
R09DS0045EJ0200 Rev.2.00
Dec 11, 2012
Page 11 of 14
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet UPD5904T7K.PDF ] |
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UPD5904T7K | CMOS Integrated Circuits High Power SP4T Switch | Renesas |
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