PDF UPD5904T7K Data sheet ( Hoja de datos )

Número de pieza	UPD5904T7K
Descripción	CMOS Integrated Circuits High Power SP4T Switch
Fabricantes	Renesas
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No Preview Available ! Preliminary Data Sheet μPD5904T7K CMOS Integrated Circuits High Power SP4T Switch R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 DESCRIPTION The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm. This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation. This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package. FEATURES • Low control voltage • Low insertion loss : Vcont = 1.3 V MIN.,VDD = 2.3 V MIN. : Lins = 0.4 dB TYP. @ f = 1 GHz • High isolation : Lins = 0.5 dB TYP. @ f = 2 GHz : ISL = 35 dB TYP. @ f = 1 GHz : ISL = 30 dB TYP. @ f = 2 GHz • High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz • High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm) • No DC blocking capacitors required. APPLICATIONS • GSM and UMTS/LTE main Antenna switching • Diversity Antenna switching • Antenna tuning Application ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form μPD5904T7K-E2 μPD5904T7K-E2-A 12-pin plastic 5904 • Embossed tape 8 mm wide QFN (T7K) (Pb-Free) • Pin 10, 11 and 12 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5904T7K-A CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 1 of 14 Free Datasheet http://www.datasheet4u.com/ 1 page μPD5904T7K <R> EVALUATION CIRCUIT RFC GND GND 12 11 10 RF4 1 RF1 9 RF3 2 13 GND 8 RF2 37 GND 456 GND VDD Vcont1 Vcont2 1 000 pF 1 000 pF 1 000 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. APPLICATION INFORMATION LESD Switch • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 5 of 14 Free Datasheet http://www.datasheet4u.com/ 5 Page μPD5904T7K RF 1/RF2/RF3/RF4 RETURN LOSS vs. OPERATING AMBIENT TEMPERATURE f = 3.8 GHz 0 −5 −10 −15 − 20 2.5 V 3.3 V −25 −30 VDD = 2.3 V −35 −40 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) RRF1/RF2/RF3/RF4 RETURN LOSS vs. OPERATING AMBIENT TEMPERATURE f = 6 GHz 0 −5 −10 −15 3.3 V − 20 −25 2.5 V −30 VDD = 2.3 V −35 −40 −60 −40 −20 0 20 40 60 80 100 Operating Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 Page 11 of 14 Free Datasheet http://www.datasheet4u.com/ 11 Page

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