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Toshiba - MOSFETs Silicon P-Channel MOS

Numéro de référence TJ60S06M3L
Description MOSFETs Silicon P-Channel MOS
Fabricant Toshiba 
Logo Toshiba 





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TJ60S06M3L fiche technique
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S06M3L
1. Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 8.6 m(typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)
(3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ60S06M3L
1: Gate
2: Drain (heatsink)
3: Source
DPAK+
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -60 V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
ID
-60 A
Drain current (pulsed)
(Note 1)
IDP
-120
Power dissipation
(Tc = 25)
PD 100 W
Single-pulse avalanche energy
(Note 2)
EAS
132 mJ
Avalanche current
IAR -60 A
Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2012-02-02
Rev.2.0
Free Datasheet http://www.datasheet4u.com/

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