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Número de pieza | TB6674PG | |
Descripción | BiCD Integrated Circuit Silicon Monolithic | |
Fabricantes | Toshiba | |
Logotipo | ||
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No Preview Available ! TB6674PG/FG/FAG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TB6674PG, TB6674FG, TB6674FAG
Stepping Motor Driver IC
TB6674PG, TB6674FG, and TB6674FAG are stepping motor
driver ICs with MOS output transistors.
The ICs can control two-phase stepping motor forward and
reverse by bipolar driving. They have a power-saving circuit and
a standby circuit.
TB6674PG
Features
z They are similar substituting products of TA7774PG,
TA7774FG, and TA7774FAG. Both products have same
packages and same pin assignments.
z One-chip two-phase bipolar stepping motor driver (including
two bridge drivers)
z Power saving operation is available.
z Standby operation is available.
Current consumption ≤ 20 μA (typ.)
z Built-in punch-through current restriction circuit for system
reliability and noise suppression.
z TTL-compatible inputs INA, INB, PS, and Vs2B terminals
z ON resistance PS = L : 2.9 Ω (Typ.)
PS = H: 7.9 Ω (Typ.)
z High driving ability.
<TB6674PG/FG>
: IO (START) 350 mA (MAX.) : VS1 ENABLE
: IO (HOLD) 100 mA (MAX.) : VS2 ENABLE
<TB6674FAG>
: IO (START) 100 mA (MAX.) : VS1 ENABLE
: IO (HOLD) 50 mA (MAX.) : VS2 ENABLE
z Typical PKG DIP16 pin, HSOP16 pin, SSOP16 pin
z GND terminal = HEAT SINK
z Process :BiCD0.6 (30 V)
z Over current shutdown circuit (ISD).
z Thermal shutdown circuit (TSD).
z Undervoltage lockout circuit (UVLO).
z Pull-down resistance for input terminal (250 kΩ).
TB6674FG
TB6674FAG
Weight
DIP16-P-300-2.54A: 1.11 g (typ.)
HSOP16-P-300-1.00: 0.50 g (typ.)
SSOP16-P-225-1.00A: 0.14 g (typ.)
The following conditions apply to solderability:
About solderability, following conditions were confirmed
(1)Use of Sn-37Pb solder Bath
·solder bath temperature: 230℃
·dipping time: 5 seconds
·the number of times: once
·use of R-Type flux
(2)Use of Sn-3.0Ag-0.5Cu solder Bath
·solder bath temperature: 245℃
·dipping time: 5 seconds
·the number of times: once
·use of R-type flux
1 Ver.3 2010-07-07
Free Datasheet http://www.datasheet4u.com/
1 page TB6674PG/FG/FAG
Electrical Characteristics (Unless otherwise specified, Ta = 25°C, VCC = 5 V, VS1 = 12 V,
and VS2A = 5 V)
Characteristic
Symbol
Supply current
Input voltage
High
Low
Input hysteresis voltage*
ICC1
ICC2
ICC3
VIN H
VIN L
VINhys
Input current
Output ON
resistance
(Note)
TB6674PG
TB6674FG
TB6674FAG
Diode forward voltage
Delay time
Thermal shutdown circuit*
TSD hysteresis *
IIN (H)
IIN (L)
Ron 1H
Ron 2H
Ron L
Ron 1H
Ron 2H
Ron L
VF U
VF L
tpLH
tpHL
TSD
TSDhys
Test
Cir−
cuit
Test Condition
PS: H, VS2B: H
1 PS: L, VS2B: H
VS2B: L
―
INA, INB, PS, Vs2B
Min Typ.
―
―
―
2.0
-0.2
3
3
1
―
―
1
INA, INB, PS, Vs2B
1
VIN = 5.0 V
Built in pull-down resistance.
VIN = 0 V
2 PS: L, VS2B: H
IOUT = 400 mA
3 PS: H, VS2B: H
IOUT = 100 mA
2 VS2B: H
IOUT = 400 mA
2 PS: L, VS2B: H
IOUT = 200 mA
3 PS: H, VS2B: H
IOUT = 50 mA
2 VS2B: H
IOUT = 200 mA
4 IF = 350 mA, PS = L
― IN − φ
― (Design target only)
― (Design target only)
⎯
5
⎯
―
―
―
―
―
―
―
―
―
―
―
―
90
20
⎯
2
7
0.9
2
7
0.9
1.2
1.0
0.5
0.5
160
20
Max
5
5
20
Vcc
0.8
⎯
38
1
5
16
3.5
5
16
3.5
2.5
2.2
―
―
―
―
Unit
mA
μA
V
mV
μA
μA
Ω
V
μs
°C
°C
* : Toshiba does not implement testing before shipping.
5 Ver.3 2010-07-07
Free Datasheet http://www.datasheet4u.com/
5 Page Test Circuit 2. Ron 1H1, Ron 1H2, Ron L2, and Ron L3
TB6674PG/FG/FAG
*: Adjust RL to correspond to IL.
Item
VSAT 1H1
VSAT 1H2
VSAT L2
VSAT L3
SW1
a
b
―
―
a
b
―
―
a
b
―
―
a
b
―
―
SW2
―
―
a
b
―
―
a
b
―
―
a
b
―
―
a
b
SW3
b
b
―
b
SW4
a
b
d
c
a
b
d
c
b
a
c
d
b
a
c
d
SW5
a
IL (mA)
100
a 400
b 100
b 400
11
2010-08-25
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 21 Páginas | |
PDF Descargar | [ Datasheet TB6674PG.PDF ] |
Número de pieza | Descripción | Fabricantes |
TB6674PG | BiCD Integrated Circuit Silicon Monolithic | Toshiba |
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