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TB6585FG fiches techniques PDF

Toshiba - Bi-CMOS Integrated Circuit Silicon Monolithic

Numéro de référence TB6585FG
Description Bi-CMOS Integrated Circuit Silicon Monolithic
Fabricant Toshiba 
Logo Toshiba 





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TB6585FG fiche technique
TB6585FG/FTG
TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic
TB6585FG, TB6585FTG
3-Phase Sine-Wave PWM Driver for BLDC Motors
Features
Sine-wave PWM drive
Triangular-wave generator
Hall amplifier
Lead angle control
Current limit control input (VRS = 0.5 V (typ.))
Rotation pulse output (3 pulse/electrical degree 360°)
Operating supply voltage range: VM = 4.5 to 42 V
Reference supply output: Vrefout = 4.4 V (typ.), 20 mA (max)
Output current: IOUT = 1.8 A (max), 1.2 A (typ.) (FG type)
IOUT = 1.0 A (max), 0.8 A (typ.) (FTG type)
Output On-resistance: Ron (P-channel and N-channel sum) =
0.7 (typ.)
TB6585FG
TB6585FTG
The following conditions apply to solderability:
About solderability, following conditions were confirmed
(1)Use of Sn-37Pb solder Bath
·solder bath temperature: 230
·dipping time: 5 seconds
·the number of times: once
·use of R-type flux
(2)Use of Sn-3.0Ag-0.5Cu solder Bath
·solder bath temperature: 245
·dipping time: 5 seconds
·the number of times: once
·use of R-type flux
Weight:
HSOP36-P-450-0.65: 0.79 g (typ.)
QFN48-P-0707-0.50: 0.137 g (typ.)
1 2011-09-09
Free Datasheet http://www.datasheet4u.com/

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