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Numéro de référence | RN2973FS | ||
Description | (RN2972FS / RN2973FS) Transistor Silicon PNP Epitaxial Type | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
RN2972FS,RN2973FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2972FS,RN2973FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine pitch small mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1972FS, RN1973FS
Equivalent Circuit and Bias Resistor Values
C
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
PC (Note 1)
−20
−20
−5
−50
50
Unit
V
V
V
mA
mW
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
fS6 6.COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
654
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Q1 Q2
123
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2972FS
RN2973FS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
R1
Test Condition
VCB = −20 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = −10 V, IE = 0, f = 1 MHz
⎯
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
300 ⎯
⎯
⎯ −0.15 V
⎯ 1.2 ⎯ pF
17.6 22 26.4
kΩ
37.6 47 56.4
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 5 | ||
Télécharger | [ RN2973FS ] |
No | Description détaillée | Fabricant |
RN2973FS | (RN2972FS / RN2973FS) Transistor Silicon PNP Epitaxial Type | Toshiba |
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