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RN2971FS fiches techniques PDF

Toshiba - (RN2970FS / RN2971FS) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2971FS
Description (RN2970FS / RN2971FS) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





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RN2971FS fiche technique
RN2970FS,RN2971FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2970FS,RN2971FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Complementary to RN1970FS, RN1971FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
C
R1
B
1.EMIITTER1 (E1)
2.EMITTER2
(E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
fS6
5.BASE1
(B1)
6.COLLECTOR1 (C1)
JEDEC
E
JEITA
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
TOSHIBA
2-1F1C
Weight: 0.001g (typ.)
Characteristics
Collector-base voltage
Symbol
VCBO
Rating
20
Unit Equivalent Circuit
V (top view)
Collector-emitter voltage
VCEO 20 V
654
Emitter-base voltage
VEBO 5 V
Collector current
Collector power dissipation
IC
PC (Note 1)
50
50
mA
mW
Q1 Q2
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55~150
°C
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2970FS
RN2971FS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
R1
Test Condition
VCB = −20 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
300
⎯ −0.15 V
1.2 pF
3.76 4.7 5.64
8 10 12 kΩ
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/

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