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PDF 2N4264 Data sheet ( Hoja de datos )
| Número de pieza | 2N4264 | |
| Descripción | General Purpose Transistor(NPN Silicon) | |
| Fabricantes | ON Semiconductor | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
NPN Silicon
Order this document
by 2N4264/D
2N4264
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
15
30
6.0
200
350
2.8
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
15 —
Vdc
30 —
Vdc
6.0 —
µAdc
— 0.1
— 10
nAdc
— 100
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
DYNAMIC CHARACTERISTICS
2N4264
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 10 V
TJ = 25°C
td @ VEB(off) = 3 V
2V
0V
2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Delay Time
200
100
70
VCC = 10 V
50
30
20 VCC = 3 V
IC/IB = 10
TJ = 25°C
TJ = 125°C
10
7.0
5.0
1.0
2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. Rise Time
50
TJ = 25°C
TJ = 125°C
30 IC/IB = 20
IC/IB = 10
20
10
7.0
5.0
1.0 2.0
^ts′ ts – 1/8 tf
IB1 = IB2
5.0 10 20
50
IC, COLLECTOR CURRENT (mA)
Figure 10. Storage Time
100 200
200
100
70
50
30
20
10
7.0
5.0
1.0
2.0
VCC = 10 V
TJ = 25°C
TJ = 125°C
IC/IB = 20
IC/IB = 10
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. Fall Time
10
7.0 Cibo
5.0
MAX
TYP
3.0 Cobo
2.0
0.1
0.2 0.5 1.0 2.0 5.0
REVERSE BIAS (Vdc)
Figure 12. Junction Capacitance
10
1000
700 IC/IB = 10
500 TJ = 25°C
TJ = 125°C
300
200
QT
100
VCC = 3 V
70
50
VCC = 10 V
30 VCC = 3 V
20
1.0 2.0 3.0
QA
5.0 7.0 10 20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 13. Maximum Charge Data
200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N4264.PDF ] | |
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