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RN2968FE fiches techniques PDF

Toshiba - (RN2967FE - RN2969FE) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2968FE
Description (RN2967FE - RN2969FE) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





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RN2968FE fiche technique
RN2967FE~RN2969FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2967FE,RN2968FE,RN2969FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1967FE~RN1969FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
Type No.
RN2967FE
RN2968FE
RN2969FE
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
RN2967FE
Emitter-base voltage RN2968FE
RN2969FE
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
50
50
6
7
15
100
100
150
55~150
V
V
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
JEDEC
JEITA
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2011-01-19
Free Datasheet http://www.datasheet4u.com/

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