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RN2968 fiches techniques PDF

Toshiba - (RN2967 - RN2969) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2968
Description (RN2967 - RN2969) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





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RN2968 fiche technique
RN2967~RN2969
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2967,RN2968,RN2969
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z Including two devices in US6 (ultra super mini type with 6 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1967~RN1969
Equivalent Circuit and Bias Resistor Values
Type No.
RN2967
RN2968
RN2969
R1 (k)
10
22
47
R2 (k)
47
47
22
JEDEC
JEITA
TOSHIBA
2-2J1B
Weight: 6.8mg (typ.)
Equivalent Circuit (Top View)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2967~2969
RN2967
RN2968
RN2969
RN2967~2969
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
50
50
6
7
15
100
200
150
55~150
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Total rating
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/

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