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Numéro de référence | RN2965FE | ||
Description | (RN2961FE - RN2966FE) Transistor Silicon PNP Epitaxial Type | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
RN2961FE~RN2966FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2961FE,RN2962FE,RN2963FE
RN2964FE,RN2965FE,RN2966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN1961FE~RN1966FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2961FE
RN2962FE
RN2963FE
RN2964FE
RN2965FE
RN2966FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 0.003 g (typ.)
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2961FE~2966FE
RN2961FE~2964FE
RN2965FE, 2966FE
RN2961FE~2966FE
Note: Total rating
Symbol
VCBO
VCEO
VEBO
IC
PC (Note)
Tj
Tstg
Rating
−50
−50
−10
−5
−100
100
150
−55~150
Equivalent Circuit
(top view)
Unit 6 5 4
V
V Q1 Q2
V
mA 1 2 3
mW
°C
°C
1 2004-07-01
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 8 | ||
Télécharger | [ RN2965FE ] |
No | Description détaillée | Fabricant |
RN2965FE | (RN2961FE - RN2966FE) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2965FS | (RN2961FS - RN2966FS) Transistor Silicon PNP Epitaxial Type | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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