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RN2966 fiches techniques PDF

Toshiba - (RN2961 - RN2966) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2966
Description (RN2961 - RN2966) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





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RN2966 fiche technique
RN2961~RN2966
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2961,RN2962,RN2963,RN2964,RN2965,RN2966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1961~RN1966
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k)
RN2961
RN2962
RN2963
RN2964
RN2965
RN2966
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1B
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2961~2966
RN2961~2964
RN2965, 2966
Symbol
VCBO
VCEO
IC
PC *
Tj
Tstg
Equivalent Circuit (Top View)
Rating
50
50
10
5
100
200
150
55~150
Unit
V
V
mA
mW
°C
°C
1 2001-06-07
Free Datasheet http://www.datasheet4u.com/

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