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Numéro de référence | RN2912AFS | ||
Description | (RN2912AFS / RN2913AFS) Transistor Silicon PNP Epitaxial Type | ||
Fabricant | Toshiba | ||
Logo | |||
RN2912AFS, RN2913AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2912AFS, RN2913AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
• Complementary to the RN1912AFS/RN1913AFS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Symbol
VCBO
Rating
−50
Unit
V
1. EMITTER1
(E1)
2. BASE1
(B1)
3. COLLECTOR2 (C2)
4. EMITTER2
(E2)
5. BASE2
(B2)
fS6 6. COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
−50 V
−5 V
Equivalent Circuit (top view)
654
Collector current
IC −80 mA
Collector power dissipation
Junction temperature
PC (Note 1)
Tj
50
150
mW
°C
Q1 Q2
Storage temperature range
Tstg
−55~150
°C
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2912AFS
RN2913AFS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
R1
Test Condition
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = −10 V, IE = 0,
f = 1 MHz
⎯
1
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
120 ⎯ 400
⎯ ⎯ −0.15 V
⎯ 0.9 ⎯ pF
17.6 22 26.4
kΩ
37.6 47 56.4
2007-11-01
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 5 | ||
Télécharger | [ RN2912AFS ] |
No | Description détaillée | Fabricant |
RN2912AFS | (RN2912AFS / RN2913AFS) Transistor Silicon PNP Epitaxial Type | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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