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RN2911FE fiches techniques PDF

Toshiba - (RN2910FE / RN2911FE) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2911FE
Description (RN2910FE / RN2911FE) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





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RN2911FE fiche technique
RN2910FE,RN2911FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2910FE,RN2911FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
Two devices are incorporated into an Extreme-Super-Mini
(6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1910FE, RN1911FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
JEDEC
JEITA
TOSHIBA
2-2N1G
Weight: 0.003g (typ.)
Equivalent Circuit
(top view)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
50
50
5
100
100
150
55~150
V
V
V
mA
mW
°C
°C
654
Q1 Q2
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/

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