DataSheetWiki


RN2911 fiches techniques PDF

Toshiba - (RN2910 / RN2911) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2911
Description (RN2910 / RN2911) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





RN2911 fiche technique
RN2910,RN2911
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2910,RN2911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1910, RN1911
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
5
100
200
150
55~150
Equivalent Circuit (Top View)
Unit
V
V
V
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
1 2001-06-07
Free Datasheet http://www.datasheet4u.com/

PagesPages 6
Télécharger [ RN2911 ]


Fiche technique recommandé

No Description détaillée Fabricant
RN2910 (RN2910 / RN2911) Transistor Silicon PNP Epitaxial Type Toshiba
Toshiba
RN2910AFS (RN2910AFS / RN2911AFS) Transistor Silicon PNP Epitaxial Type Toshiba
Toshiba
RN2910FE (RN2910FE / RN2911FE) Transistor Silicon PNP Epitaxial Type Toshiba
Toshiba
RN2910FS (RN2910FS / RN2911FS) Transistor Silicon PNP Epitaxial Type Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche