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Numéro de référence | RN2910 | ||
Description | (RN2910 / RN2911) Transistor Silicon PNP Epitaxial Type | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
RN2910,RN2911
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2910,RN2911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1910, RN1911
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
−50
−50
−5
−100
200
150
−55~150
Equivalent Circuit (Top View)
Unit
V
V
V
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
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2-2J1A
1 2001-06-07
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 6 | ||
Télécharger | [ RN2910 ] |
No | Description détaillée | Fabricant |
RN2910 | (RN2910 / RN2911) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2910AFS | (RN2910AFS / RN2911AFS) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2910FE | (RN2910FE / RN2911FE) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2910FS | (RN2910FS / RN2911FS) Transistor Silicon PNP Epitaxial Type | Toshiba |
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