DataSheetWiki


RN2909FS fiches techniques PDF

Toshiba - (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2909FS
Description (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





1 Page

No Preview Available !





RN2909FS fiche technique
RN2907FS~RN2909FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FS,RN2908FS,RN2909FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1907FS to RN1909FS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
E
Type No.
RN2907FS
RN2908FS
RN2909FS
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
ffSS6
11.E.EMMITIITTETRE1R1 (E(1E)1)
2345623456.....ECCBB.....ECCBBMAAOOMOOAASSLILSSTLLEEILLEETTLLEE12ET21EECCRECCTT2RTTOO2OORRRR1221 (((((EBCBC(((((22221CCBEB)))))12221)))))
JEDEC
JEITA
TOSHIBA
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit (top view)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2907FS to
RN2909FS
RN2907FS
Emitter-base voltage
RN2908FS
RN2909FS
Collector current
Collector power dissipation RN2907FS to
Junction temperature
RN2909FS
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
20
20
6
7
15
50
50
150
55 to 150
Unit
V
V
V
mA
mW
°C
°C
654
Q1 Q2
123
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
1 2010-07-08
Free Datasheet http://www.datasheet4u.com/

PagesPages 6
Télécharger [ RN2909FS ]


Fiche technique recommandé

No Description détaillée Fabricant
RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Toshiba Semiconductor
Toshiba Semiconductor
RN2909FS (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type Toshiba
Toshiba

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche