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RN2901AFS fiches techniques PDF

Toshiba - (RN2901AFS - RN2906AFS) Transistor Silicon PNP Epitaxial Type

Numéro de référence RN2901AFS
Description (RN2901AFS - RN2906AFS) Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba 
Logo Toshiba 





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RN2901AFS fiche technique
RN2901AFS~RN2906AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor)
RN2901AFS, RN2902AFS, RN2903AFS
RN2904AFS, RN2905AFS, RN2906AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly cost.
Complementary to the RN1901AFS to RN1906AFS
Equivalent Circuit and Bias Resistor Values
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
16
25
34
C
R1
B
E
Type No.
RN2901AFS
RN2902AFS
RN2903AFS
RN2904AFS
RN2905AFS
RN2906AFS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
fS6
JEDEC
1.EMITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2 (E2)
5.BASE2
(B2)
6.COLLECTOR1 (C1)
JEITA
TOSHIBA
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
(top view)
Characteristic
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2901AFS to 2906AFS
RN2901AFS to 2904AFS
RN2905AFS, 2906AFS
VCBO
VCEO
VEBO
IC
RN2901AFS to 2906AFS PC (Note 1)
Tj
Tstg
50
50
10
5
80
50
150
55 to 150
Unit
V
V
V
mA
mW
°C
°C
654
Q1 Q2
123
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
1 2010-05-14
Free Datasheet http://www.datasheet4u.com/

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