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Numéro de référence | RN2901 | ||
Description | (RN2901 - RN2906) Transistor Silicon PNP Epitaxial Type | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
RN2901~RN2906
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2901,RN2902,RN2903,RN2904,RN2905,RN2906
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1901~RN1906
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2901
RN2902
RN2903
RN2904
RN2905
RN2906
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Equivalent Circuit (Top View)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2901~2906
RN2901~2904
RN2905, 2906
RN2901~2906
Symbol
VCBO
VCEO
VEBO
IC
PC *
Tj
Tstg
Rating
−50
−50
−10
−5
−100
200
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-05
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 7 | ||
Télécharger | [ RN2901 ] |
No | Description détaillée | Fabricant |
RN2901 | (RN2901 - RN2906) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2901AFS | (RN2901AFS - RN2906AFS) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2901FE | (RN2901FE - RN2906FE) Transistor Silicon PNP Epitaxial Type | Toshiba |
RN2901FS | (RN2901FS - RN2906FS) Transistor Silicon PNP Epitaxial Type | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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