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NXP Semiconductors - PNP low VCEsat (BISS) transistor

Numéro de référence PBSS5160V
Description PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS5160V fiche technique
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High efficiency leading to less heat generation
„ Reduces printed-circuit board area required
„ Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
IC = 1 A;
IB = 100 mA
-
[1] -
-
-
- 60
- 1
- 2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ
Free Datasheet http://www.datasheet4u.com/

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