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Numéro de référence | PBSS5160V | ||
Description | PNP low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments
Automotive
Telecom infrastructure
Industrial
Power management
DC-to-DC conversion
Supply line switching
Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
IC = −1 A;
IB = −100 mA
-
[1] -
-
-
- −60
- −1
- −2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 14 | ||
Télécharger | [ PBSS5160V ] |
No | Description détaillée | Fabricant |
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