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Numéro de référence | PBSS5260QA | ||
Description | PNP low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
PBSS5260QA
60 V, 1.7 A PNP low VCEsat (BISS) transistor
28 August 2013
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
NPN complement: PBSS4260QA.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; pulsed
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -60 V
- - -1.7 A
- - -2.5 A
- 195 280 mΩ
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Pages | Pages 17 | ||
Télécharger | [ PBSS5260QA ] |
No | Description détaillée | Fabricant |
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