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NXP Semiconductors - PNP/PNP low VCEsat (BISS) transistor

Numéro de référence PBSS5260PAP
Description PNP/PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS5260PAP fiche technique
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -60 V
- - -2 A
- - -3 A
- - 250 mΩ
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