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JDV2S17S fiches techniques PDF

Toshiba - VCO

Numéro de référence JDV2S17S
Description VCO
Fabricant Toshiba 
Logo Toshiba 





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JDV2S17S fiche technique
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S17S
VCO for UHF Band Radio
High Capacitance Ratio: C1V/C4V = 2.1 (typ.)
Low Series Resistance : rs = 0.6 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
150
55~150
Unit
V
°C
°C
JDV2S17S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 µA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯ V
⎯ ⎯ 3 nA
1.77 2.01
pF
0.8 1.0
2 2.2
0.6 0.75
1 2004-02-09
Free Datasheet http://www.datasheet4u.com/

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