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HBTA12A60 fiches techniques PDF

SHANTOU HUASHAN - INNER INSULATED TYPE TRIAC

Numéro de référence HBTA12A60
Description INNER INSULATED TYPE TRIAC
Fabricant SHANTOU HUASHAN 
Logo SHANTOU HUASHAN 





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HBTA12A60 fiche technique
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA12A60
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=12A)
* High Commutation dv/dt
General Description
The Triac HBTA8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PGM Peak Gate Power Dissipation
VDRM Repetitive Peak Off-State Voltage
IT RMS
R.M.S On-State Current Ta=79
VG M Peak Gate Voltage
IGM Peak Gate Current
ITSM Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
VISO RMS Isolation Breakdown Voltage
Electrical Characteristics Ta=25
40~125
40~125
5W
600V
12A
10V
2.0A
119/130A
2500V
Symbol
Items
IDRM
VTM
I+GT1
I- GT1
I-GT3
V+ GT1
V- GT1
V- GT3
VGD
(dv/dt)c
Rth(j-c)
IH
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Current
Gate Trigger Current
Gate Trigger Voltage
Gate Trigger Voltage
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
Holding Current
Min.
0.2
10
20
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
3.3
Unit Conditions
VD=VDRM, Single Phase,Half
mA Wave, TJ=125
V IT=12A, Inst. Measurement
mA VD=6V, RL=10 ohm
mA
mA
V
V
V
V
V/µS
/W
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
TJ=125 ,VD=1/2VDRM
TJ=125 ,VD=2/3VDRM
(di/dt)c=-4.0A/ms
Junction to case
mA
Free Datasheet http://www.datasheet4u.com/

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