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PDF NE3519M04 Data sheet ( Hoja de datos )
| Número de pieza | NE3519M04 | |
| Descripción | N-channel GaAs HJ-FET | |
| Fabricantes | Renesas | |
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PreliminaryData Sheet
NE3519M04
R09DS0008EJ0100
Rev.1.00
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier Oct 21, 2010
FEATURES
• Low noise figure and high associated gain
NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, etc.)
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE3519M04-T2
NE3519M04-T2B
NE3519M04-T2-A
NE3519M04-T2B-A
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
3 kpcs/reel
15 kpcs/reel
V85 • Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage VGS −3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
200
150
Channel Temperature
Tch +150
Storage Temperature
Tstg −65 to +150
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 1 of 11
Free Datasheet http://www.datasheet4u.com/
1 page  
NE3519M04
MAG, MSG, K FACTOR vs. FREQUENCY
25 5.0
VDS = 2 V,
ID = 10 mA
4.5
20 4.0
3.5
15 3.0
MSG
10
MAG
2.5
2.0
1.5
5
K factor
1.0
0.5
0 0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency f (GHz)
MAG, MSG, K FACTOR vs. FREQUENCY
25 5.0
VDS = 2 V,
ID = 25 mA
4.5
20 4.0
3.5
15 3.0
MSG
10
MAG
2.5
2.0
1.5
5
K factor
1.0
0.5
0 0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
25 0
VDS = 2 V,
ID = 10 mA
20 –5
15
|S21|2
10
5
|S12|2
–10
–15
–20
0 –25
0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency f (GHz)
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
25 0
VDS = 2 V,
ID = 25 mA
20 –5
|S21|2
15
–10
10 –15
|S12|2
5 –20
0 –25
0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency f (GHz)
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 5 of 11
Free Datasheet http://www.datasheet4u.com/
5 Page 
NE3519M04
Caution GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 11 of 11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
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| PDF Descargar | [ Datasheet NE3519M04.PDF ] | |
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