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PDF NE3517S03 Data sheet ( Hoja de datos )
| Número de pieza | NE3517S03 | |
| Descripción | K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NE3517S03 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.datasheet4u.com/
1 page  
NE3517S03
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
DRAIN CURRENT
vs. DRAIN TO SOURCE VOLTAGE
100
80
150
100
50
0 50 100 150 200 250
Ambient Temperature TA (°C)
DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
80
VDS = 2 V
60
40
20
0
–2.0
–1.0
Gate to Source Voltage VGS (V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
1.0
VDS = 2 V
ID = 10 mA
0.9
20
19
18
0.8 17
NFmin
16
0.7 15
Ga 14
0.6 13
12
0.5
11
0.4 10
10 12 14 16 18 20 22 24
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
60
40 VGS = 0 V
–0.2 V
20
–0.4 V
–0.6 V
0 1.0 2.0
Drain to Source Voltage VDS (V)
OUTPUT POWER, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
20
VDS = 3 V, ID = 15 mA set
f = 20 GHz
15
50
45
40
Pout 35
10 30
25
5 20
ID
15
0
––520 –15 –10 –5
IG
05
10
5
0
10
Input Power Pin (dBm)
Data Sheet PG10787EJ01V0DS
3
Free Datasheet http://www.datasheet4u.com/
5 Page 
NE3517S03
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet NE3517S03.PDF ] | |
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