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PDF NE3516S02 Data sheet ( Hoja de datos )

Número de pieza NE3516S02
Descripción N-Channel GaAs HJ-FET
Fabricantes Renesas 
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Data Sheet
NE3516S02
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
R09DS0038EJ0100
Rev.1.00
Apr 18, 2012
FEATURES
Low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
4-pin Micro-X plastic (S02) package
APPLICATIONS
X to Ku band DBS LNB
Other Ku band communication system
ORDERING INFORMATION
Part Number
Order Number Package Quantity Marking
Supplying Form
NE3516S02-T1C NE3516S02-T1C-A S02
2 kpcs/reel
NE3516S02-T1D NE3516S02-T1D-A package 10 kpcs/reel
(Pb-Free)
P • 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3516S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS 4.0
Gate to Source Voltage
VGS –3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG 100
Ptot 165
Channel Temperature
Tch +125
Storage Temperature
Tstg –65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
+1
5
TYP.
+2
10
MAX.
+3
15
0
Unit
V
mA
dBm
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
Page 1 of 8
Free Datasheet http://www.datasheet4u.com/

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NE3516S02 pdf
NE3516S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
1.7 mm/R.P.
Reference Plane
(Calibration Plane)
φ 0.3 TH
1.7
2.6
1.7
Reference Plane
(Calibration Plane)
L2–uX Ver. 1
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
Page 5 of 8
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