PDF 2SC5508 Data sheet ( Hoja de datos )

Número de pieza	2SC5508
Descripción	NPN SILICON RF TRANSISTOR
Fabricantes	Renesas
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No Preview Available ! 2SC5508 Preliminary Data Sheet NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • fT = 25 GHz technology adopted • Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number 2SC5508 2SC5508-T2 2SC5508-T2B Order Number 2SC5508-A 2SC5508-T2-A 2SC5508-T2B-A Quantity 50 pcs (Non reel) 3 kpcs/reel 15 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note Free air. Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg Ratings 15 3.3 1.5 35 115 150 −65 to +150 Unit V V V mA mW °C °C THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 150 650 Unit °C /W °C /W CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 1 of 8 Free Datasheet http://www.datasheet4u.com/ 1 page 2SC5508 Noise Characteristics NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 30 f = 1.0 GHz VCE = 2 V 5 Ga 25 4 20 3 15 2 NF 10 15 00 1 10 100 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 30 f = 2.0 GHz VCE = 2 V 5 25 4 20 Ga 3 15 2 NF 10 15 00 1 10 100 Collector Current IC (mA) Chapter Title NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 30 f = 1.5 GHz VCE = 2 V 5 25 Ga 4 20 3 15 2 NF 10 15 00 1 10 100 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 30 f = 2.5 GHz VCE = 2 V 5 25 4 20 Ga 3 15 2 NF 10 15 00 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 5 of 8 Free Datasheet http://www.datasheet4u.com/ 5 Page

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