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PDF 2SC5505 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5505 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
■ Features
• High-speed switching
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
5
8
16
20
2.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 60 V, IE = 0
VCE = 60 V, IB = 0
VCE = 2 V, IC = 1 A
VCE = 2 V, IC = 5 A
IC = 5 A, IB = 0.25 A
IC = 5 A, IB = 0.25 A
IC = 4 A
IB1 = 400 mA, IB2 = −400 mA
VCC = 50 V
60
100
100
80 280
50
1.2
1.7
0.2 0.5
0.5 1.0
0.10 0.15
V
µA
µA
V
V
µs
µs
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00287AED
1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5505.PDF ] | |
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