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Renesas - SiGe BiCMOS Integrated Circuit

Numéro de référence UPD5750T7D
Description SiGe BiCMOS Integrated Circuit
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UPD5750T7D fiche technique
μPD5750T7D
SiGe BiCMOS Integrated Circuit
Wide Band LNA IC with Through Function
Data Sheet
R09DS0009EJ0100
Rev.1.00
Feb 24, 2011
DESCRIPTION
The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This
IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function
(bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the
high reception sensitivity and low power consumption.
The package is a 6-pin WLBGA (Wafer Level Ball Grid Array) (T7D) suitable for surface mount.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
Low voltage operation
: VCC = 1.8 V TYP.
Low mode control voltage
: Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V
Low current consumption
: ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode)
: ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode)
Low noise
: NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz
(LNA-mode)
: NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz
High gain
: GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz
(LNA-mode)
: GP = 12.5 dB TYP. @VCC = 1.8 V, f = 770 MHz
Low insertion loss
: Lins = 1.2 dB TYP. @VCC = 1.8 V, f = 470 MHz
(Bypass-mode)
: Lins = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz
High-density surface mounting : 6-pin WLBGA (0.73 × 0.48 × 0.26 mm)
Included protection circuit for ESD
APPLICATIONS
Low noise amplifier for the portable and mobile digital TV system, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPD5750T7D-E4A μPD5750T7D-E4A-A 6-pin WLBGA
(T7D)
(Pb-Free)
A Embossed tape 8 mm wide
Pin A3, B3 face the perforation side of the tape
Qty 10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPD5750T7D
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0009EJ0100 Rev.1.00
Feb 24, 2011
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