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PDF TC3879 Data sheet ( Hoja de datos )
| Número de pieza | TC3879 | |
| Descripción | 7W Packaged Single-Bias PHEMT GaAs Power FETs | |
| Fabricantes | Transcom | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TC3879 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Preliminary
TC3879
PRE1_20070518
7 W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
! 7W Typical Output Power
! 10.5dB Typical Linear Power Gain at 2.45 GHz
! High Linearity: IP3 = 48.5 dBm Typical
! High Power Added Efficiency: Nominal PAE of 35%
! Breakdown Voltage: BVDGO ≥ 18V
! 100 % DC Tested
! Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to
provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the
GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application.
All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
P1dB Output Power at 1dB Gain Compression Point VDS = 10 V
GL Linear Power Gain VDS = 10 V
IP3 Intercept Point of the 3rd-order Intermodulation VDS = 10 V, *PSCL = 27 dBm
PAE Power Added Efficiency at 1dB Compression Power
38.5
10.5
48.5
35
dBm
dB
dBm
%
IDS
BVDGO
Rth
Drain-Source Current at VDS = 10 V
Drain-Gate Breakdown Voltage at IDGO = 7.5mA
Thermal Resistance
1750
18 22
1.8
mA
Volts
°C/W
Note: *PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet TC3879.PDF ] | |
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