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PDF BF822W Data sheet ( Hoja de datos )
| Número de pieza | BF822W | |
| Descripción | NPN High-Voltage Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN High-Voltage Transistor
BF822W
Features
Low current (max. 50 mA)
High voltage (max. 250 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
VCEO
Emitter-base voltage (open collector)
VEBO
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
Total power dissipation * (Tamb 25 ;)
Ptot
Storage temperature
Tstg
Junction temperature
Tj
Operating ambient temperature
Ramb
Thermal resistance from junction to ambient *
Rth j-a
* Transistor mounted on an FR4 printed-circuit board.
Rating
250
250
5
50
100
50
200
-65 to +150
150
-65 to +150
625
Unit
V
V
V
mA
mA
mA
mW
K/W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Feedback capacitance
Transition frequency
* Pulse test: tp 300 ìs; ä 0.02.
Marking
Marking
1W
Symbol
Testconditons
ICBO
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150
IEBO IC = 0; VEB = 5 V
hFE IC = 25 mA; VCE = 20 V
VCEsat IC = 30 mA; IB = 5 mA
Cre IC = 0; VCB = 30 V; f = 1 MHz
fT IC = 10 mA; VCE = 10 V; f=100MHz
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
10 nA
10 ìA
50 nA
50
600 mV
1.6 pF
60 MHz
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1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BF822W.PDF ] | |
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