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NTTFS5826NL fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTTFS5826NL
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTTFS5826NL fiche technique
NTTFS5826NL
Power MOSFET
60 V, 24 mW, Single NChannel, m8FL
Features
Small Footprint (3.3 x 3.3 mm) for Compact Designs
Low QG(TOT) to Minimize Switching Losses
Low Capacitance to Minimize Driver Losses
These are PbFree Devices
Applications
Motor Drivers
DCDC Converters
Synchronous Rectification
Power Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreesnt1R, 2Y,Jamndb 3)
Tmb = 25°C
Tmb = 100°C
Power Dissipation
aRnYdJ3m) b (Notes 1, 2,
Continuous Drain
Current
& 3)
RqJA
(Notes
1
Steady
State
Tmb = 25°C
Tmb = 100°C
TA = 25°C
TA = 100°C
Power Dissipation
RqJA (Notes 1 & 3)
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
"20
20
14
19
10
8
6
3.1
1.6
133
55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 20 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 14.4 A, L = 1.0 mH, RG = 25 W)
EAS 20 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Notes 2, 3)
RYJmb
7.9 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
24 mW @ 10 V
32 mW @ 4.5 V
ID MAX
20 A
NChannel
D
G
S
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 5826 D
S AYWWG D
GGD
5826
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS5826NLTAG WDFN8 1500/Tape & Reel
(PbFree)
NTTFS5826NLTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 2
1
Publication Order Number:
NTTFS5826NL/D
Free Datasheet http://www.datasheet4u.com/

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